GENERATION OF DEFECTS IN P-N-JUNCTIONS THAT ARE MADE FROM GaAS AND GaAIAS AFTER THE X-RAY IRRADIATION

2012

Irkha, V.I.

Ірха, В.І.

Ирха, В.И.

Gorbachev, V.E.

Горбачов, В.Е.

Горбачев, В.Э.

Mikhalaki, V.F.

Міхалакі, В.Ф.

Михалаки, В.Ф.

The process of generation and reproduction of dark-patch defects in GaAs and GaAlAs p-n-junctions after the X-ray irradiation are considered.