GENERATION OF DEFECTS IN P-N-JUNCTIONS THAT ARE MADE FROM GaAS AND GaAIAS AFTER THE X-RAY IRRADIATION
Date
2012Author
Irkha, V.I.
Ірха, В.І.
Ирха, В.И.
Gorbachev, V.E.
Горбачов, В.Е.
Горбачев, В.Э.
Mikhalaki, V.F.
Міхалакі, В.Ф.
Михалаки, В.Ф.
Metadata
Show full item recordAbstract
The process of generation and reproduction of dark-patch defects in GaAs and GaAlAs p-n-junctions after the X-ray irradiation are considered.