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    • GENERATION OF DEFECTS IN P-N-JUNCTIONS THAT ARE MADE FROM GaAS AND GaAIAS AFTER THE X-RAY IRRADIATION 

      Irkha, V.I.; Ірха, В.І.; Ирха, В.И.; Gorbachev, V.E.; Горбачов, В.Е.; Горбачев, В.Э.; Mikhalaki, V.F.; Міхалакі, В.Ф.; Михалаки, В.Ф. (Національний університет «Львівська політехніка», 2012)
      The process of generation and reproduction of dark-patch defects in GaAs and GaAlAs p-n-junctions after the X-ray irradiation are considered.